Institute of Electronics Material Technology, Poland, Research (RES)

prof. Andrzej Jeleński, email:
Institute of Electronic Materials Technology
133, Wolczynska Street
01-919 Warsaw, POLAND

Phone: Tel./Fax. (+48 22) 8
Fax: Fax: (+48 22) 864 54

Description and expertise of the organisation:
ITME is the leading Polish government research and development centre:
- conducting scientific studies and development work in material engineering, solid state physics and electronics
- developing micro and nano technologies and materials
- designing and developing semiconductor devices such as: SiC and GaN diodes and transistors, lasers, photodetectors and passive components.
- developing characterisation methodes for materials structures and devices.

ITME R&D activity covers following areas:

silicon: (wafers, epitaxial layers, (high resistivites and thicknesses,) porous Si,
III/V semiconductor compounds (GaAs, InP, InAs, GaP), wafers, epitaxial structures
GaN epitaxial structures on Saphire and SiC, SiC wafers and epilayers
Oxide materials: YaG, YaP, GdVO, GdCoB with various dopings, and others active, nonlinear and piezoelctric materials
Glasses with given spectral characteristics, active glass
Ceramics transparent and active
Optical fibres: active photonic, image guides
Nanomaterials: self organized materials, metamaterials, photonic crystals

mask shop (smallest feature 0.5 micrometer)
thin film deposition of: dielectrics (SiO2, Si3N4, AlN, multiplayer metallisations
lithography: hard contact deep UV, e- beam direct writing
etching (RIE and ICP RIE), sidewall control, deep trenches of tenths of micrometers

Materials and components characterization full range from DC to UV frequencies

optical guides, diffractive filters and lenses, photonic crystal fibres
passive elements on membranes (sensors)
SAW filters, resonators, sensors, actuators
Hybrid circuits- materials

Active devices:
lasers, photodetectors, transistors, diodes,supercontinouum light sources.

Research interests / Project ideas
Active and passive components for FTTH access network, such as:

- Supercontinuum light sources based on microstructured optical fibres for DWDM.

- Nanostructured optical fibres for line dispersion compensation.

- PBG fibres for HDWDM delivery in FTTH.

- Apodised FBG gratings with superior side lobe compression for fibre fault monitoring in FTTH.

- Materials with the refractive index depending upon the elecric field based on MQW.

Supercontinuum light sources, PBG fibres, DWDM, MQW